THz transient photoconductivity of the III–V dilute nitride GaPyAs1−y−xNx. (26th October 2018)

• Record Type: Journal Article
• Authors: Heyman, J N; Weiss, E M; Rollag, J R; Yu, K M; Dubon, O D; Kuang, Y J; Tu, C W; Walukiewicz, W
• Is Part Of: Semiconductor science and technology. Volume 33:Number 12(2018:Dec.)
• Publication Date: 2018-10-26
• Subjects: III–V N -- photovoltaic -- ultrafast -- terahertz -- intermediate band; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/aae7c5
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: THz Time-Resolved Photoconductivity is used to probe carrier dynamics in the dilute III–V nitride GaP0.49 As0.47 N0.036 . In these measurements a femtosecond optical pump-pulse excites electron–hole pairs, and a delayed THz pulse measures the change in conductivity. We find the photoconductivity is dominated by localized carriers. The decay of photoconductivity after excitation is consistent with bimolecular electron–hole recombination with recombination constant r = 3.2 ± 0.8 × 10 −8 cm 3 s −1 . We discuss the implications for applications in solar energy.