Cite
MLA Citation
Željko Pastuović et al.. “Deep level defects in 4H-SiC introduced by ion implantation: the role of single ion regime.” Journal of physics, vol. 29, 2017, p. . http://access.bl.uk/ark:/81055/vdc_100087556749.0x00003f
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Željko Pastuović et al.. “Deep level defects in 4H-SiC introduced by ion implantation: the role of single ion regime.” Journal of physics, vol. 29, 2017, p. . http://access.bl.uk/ark:/81055/vdc_100087556749.0x00003f