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HARVARD Citation
Pastuović, Ž. et al. (2017). Deep level defects in 4H-SiC introduced by ion implantation: the role of single ion regime. Journal of physics. p. . [Online].
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Pastuović, Ž. et al. (2017). Deep level defects in 4H-SiC introduced by ion implantation: the role of single ion regime. Journal of physics. p. . [Online].