Electrostatic Formation of Coupled Si/SiO2 Quantum Dot Systems. Issue 1 (1998)

• Record Type: Journal Article
• Authors: Hyldgaard, Per; Harbury, Henry K.; Porod, Wolfgang
• Is Part Of: VLSI design. Volume 8:Issue 1/4(1998)
• Page Start: 555
• Page End: 558
• Publication Date: 1998
• Subjects: 3D simulation and modeling -- finite element method -- silicon/silicon-dioxide quantum dots -- quantum-dot cellular automata; Integrated circuits -- Very large scale integration -- Periodicals; 621.395
• DOI: 10.1155/1998/67609
• Languages: English
• ISSNs: 1065-514X

Abstract

Abstract : We present three-dimensional numerical modeling results for gated Si/SiO2 quantum dot systems in the few-electron regime. In our simulations, the electrostatic confining potential results from the Poisson equation assuming a self-consistent Thomas-Fermi charge model. We find that a very thin SiO2 top insulating layer allows an effective control with single-electron confinement in quantum dots with radius less than 10nm and investigate the detailed potential and resulting charge densities. Our three-dimensional finite-element modeling tool allows future investigations of the charge coupling in gated few-electron quantum-dot cellular automata.