The current and capacitance characteristics as a function of sample temperature in YMn0.90Os0.10O3/p-Si structures. (1st November 2019)

• Record Type: Journal Article
• Authors: Coșkun, M.; Polat, O.; Coșkun, F.M.; Efeoğlu, H.; Caglar, M.; Durmus, Z.; Turut, A.
• Is Part Of: Materials science in semiconductor processing. Volume 102(2019)
• Publication Date: 2019-11-01
• Subjects: Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2019.104587
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: The I-V and C-V measurements have been performed on the Al/YMn0.90 Os0.10 O3 (YMOO) / p -Si/Al metal/ferroelectric material/semiconductor (MFES) structure at temperatures between 180 K and 320 K. YMOO thin film has been grown onto p -Si wafer by radio frequency (rf) magnetron sputtering technique using a polycrystalline YMOO single target. The surface roughness of the obtained YMOO thin film has been studied by atomic force microscope (AFM). Furthermore, the oxidation states of individual components, Y and O, have been investigated via X-ray photoelectron spectroscopy (XPS) analyses. A barrier height (BH) value of Φ I V = 0.89 eV for the Al/YMOO/ p -Si structure has been subtracted from the I-V curves at 300 K. The obtained value of BH value is higher than the value of the conventional Al/ p -Si diode, 0.58 eV. The linear relation of l n ( I F / V F 2 ) v s V F − 1 plot has indicated that Fowler-Nordheim tunneling current affects through the interfacial layer at each temperature. The BH from C D − 2 versus V D curves has been obtained as Φ C V = 0.38 eV at 300 K and this value is lower than the value of Φ I V = 0.89 eV at 300 K eV. Such behavior is unexpected because the value of Φ C V is higher than that of Φ I V at the same temperature in the heterojunctions or metal-semiconductor contacts.