Spatially selective hydrogen irradiation of dilute nitride semiconductors: a brief review. (29th March 2018)

• Record Type: Journal Article
• Authors: Felici, Marco; Pettinari, Giorgio; Biccari, Francesco; Capizzi, Mario; Polimeni, Antonio
• Is Part Of: Semiconductor science and technology. Volume 33:Number 5(2018:May)
• Publication Date: 2018-03-29
• Subjects: dilute nitrides -- hydrogen in semiconductors -- site-controlled quantum dots -- nanophotonics; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/aab3f1
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: We provide a brief survey of the most recent results obtained by performing spatially selective hydrogen irradiation of dilute nitride semiconductors. The striking effects of the formation of stable N–H complexes in these compounds—coupled to the ultrasharp diffusion profile of H therein—can be exploited to tailor the structural (lattice constant) and optoelectronic (energy gap, refractive index, electron effective mass) properties of the material in the growth plane, with a spatial resolution of a few nm. This can be applied to the fabrication of site-controlled quantum dots (QDs) and wires, but also to the realization of the optical elements required for the on-chip manipulation and routing of qubits in fully integrated photonic circuits. The fabricated QDs—which have shown the ability to emit single photons—can also be deterministically coupled with photonic crystal microcavities, proving their inherent suitability to act as integrated light sources in complex nanophotonic devices.