Optimization of SnS active layer thickness for solar cell application. (November 2017)

• Record Type: Journal Article
• Authors: Gupta, Yashika; Arun, P.
• Is Part Of: Journal of semiconductors. Volume 38:Number 11(2017:Nov.)
• Publication Date: 2017-11
• Subjects: thin film -- chalcogenides -- optical properties; 8420; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1674-4926/38/11/113001
• Languages: English
• ISSNs: 1674-4926

Abstract

Abstract: This work presents a comparative study of n-SnS and p-SnS active layers for increased solar cell efficiency. Tin sulphide thin films of various thicknesses having p-type and n-type conductivity were fabricated by thermal evaporation. Both type of films had the same (113) orientation of the crystal planes with a constant tensile strain of ~ 0.003 and ~ 0.011, respectively. The persistent photocurrent was observed in all n-SnS and p-SnS samples with the current's time decay constant decreasing with increasing film thickness. Hole mobility of thicker p-SnS films was found to be greater than the electron mobility in n-SnS samples, with mobility (both hole and electron) showing an increasing trend with film thickness. The optimum absorber layer thickness for both p- and n-SnS layers should have a high value of diffusion length for a given absorption coefficient and band-gap.