Universal core model for multiple-gate field-effect transistors with short channel and quantum mechanical effects. (16th May 2018)

• Record Type: Journal Article
• Authors: Shin, Yong Hyeon; Bae, Min Soo; Park, Chuntaek; Park, Joung Won; Park, Hyunwoo; Lee, Yong Ju; Yun, Ilgu
• Is Part Of: Semiconductor science and technology. Volume 33:Number 6(2018:Jun.)
• Publication Date: 2018-05-16
• Subjects: universal core model -- multiple-gate FETs -- charge model -- short channel effects -- quantum mechanical effects; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/aac063
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: A universal core model for multiple-gate (MG) field-effect transistors (FETs) with short channel effects (SCEs) and quantum mechanical effects (QMEs) is proposed. By using a Young's approximation based solution for one-dimensional Poisson's equations the total inversion charge density ( Q inv ) in the channel is modeled for double-gate (DG) and surrounding-gate SG (SG) FETs, following which a universal charge model is derived based on the similarity of the solutions, including for quadruple-gate (QG) FETs. For triple-gate (TG) FETs, the average of DG and QG FETs are used. A SCEs model is also proposed considering the potential difference between the channel's surface and center. Finally, a QMEs model for MG FETs is developed using the quantum correction compact model. The proposed universal core model is validated on commercially available three-dimensional ATLAS numerical simulations.