Low leakage current resistive memory based on Bi1.10 (Fe0.95Mn0.05) O3 films. (30th July 2018)

• Record Type: Journal Article
• Authors: Li, Zhen; Yang, Zhengchun; Wu, Jiagang; Zhou, Baozeng; Bao, Qiwen; Zhang, Kailiang; Zhao, Jinshi; Wei, Jun
• Is Part Of: Semiconductor science and technology. Volume 33:Number 9(2018:Sep.)
• Publication Date: 2018-07-30
• Subjects: resistive random access memory (RRAM) -- thin films -- BiFeO3 -- Mn-doped -- sputtering -- lower leakage current; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/aad340
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: The bipolar resistance switching characteristics were confirmed in a resistive memory device with an Ag/Bi1.10 (Fe0.95 Mn0.05 )O3 /SRO/Pt/TiO2 /SiO2 /Si(100) structure, in which the limiting current was 1 mA. In comparison with BiFeO3 —based memory, it was found that doping with Mn effectively reduced the leakage current of the device and thus improved the device endurance (200 cycles-1000 cycles). The high-temperature retention test demonstrated that the device could be used for 10 years without losing data. Through x-ray photoelectron spectroscopy analysis of Bi1.10 (Fe0.95 Mn0.05 )O3 thin film elements, it was inferred that both the oxygen vacancies, which are produced by high-temperature conditional growth, and the doped Mn change the Fe valence, thereby reducing the leakage current. Finally, through fitting analysis of the I – V diagram and temperature tests in the low-resistance state, we inferred that the behavior of the resistance conversion is due to the formation of Ag conductive filaments.