Effects of tunneling dielectrics formed by CO2 and N2O plasma-assisted oxidations on memory characteristics in p-channel LTPS NVM devices with ONO structure. (24th October 2018)

• Record Type: Journal Article
• Authors: Jang, Kyungsoo; Lee, Sojin; Nguyen, Thi Cam Phu; Park, Heejun; Kim, Jungsoo; Shin, Donggi; Lee, Youn-Jung; Kim, Youngkuk; Yi, Junsin
• Is Part Of: Semiconductor science and technology. Volume 33:Number 12(2018:Dec.)
• Publication Date: 2018-10-24
• Subjects: plasma-assisted oxidation -- tunneling layer -- LTPS -- NVM -- next-generation display; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/aae622
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: Non-volatile memory (NVM) devices using carbon dioxide (CO2 ) and nitrous oxide (N2 O) plasma-assisted tunneling layers have outstanding electrical properties measured at 300 K. However, the retention characteristics of NVM devices using CO2 and N2 O plasma-assisted tunneling oxides are different at 360 K. The memory window of an NVM device using CO2 tunneling oxide was about 2.01 V (81.7%) after 10 years at 360 K. However, there was retention charge loss in the NVM device using a N2 O tunneling layer at 360 K due to the temperature instability under negative bias. For an actual NVM device using N2 O tunneling oxide, the memory window was reduced to about 1.58 V (65.6%) after 10 years at 360 K.