Cite
MLA Citation
Le Wang et al.. “Localization-driven metal–insulator transition in epitaxial hole-doped Nd1−xSrxNiO3 ultrathin films.” Journal of physics, vol. 29, 2017, p. . http://access.bl.uk/ark:/81055/vdc_100087631851.0x000048
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Le Wang et al.. “Localization-driven metal–insulator transition in epitaxial hole-doped Nd1−xSrxNiO3 ultrathin films.” Journal of physics, vol. 29, 2017, p. . http://access.bl.uk/ark:/81055/vdc_100087631851.0x000048