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HARVARD Citation
Wang, L. et al. (2017). Localization-driven metal–insulator transition in epitaxial hole-doped Nd1−xSrxNiO3 ultrathin films. Journal of physics. p. . [Online].
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Wang, L. et al. (2017). Localization-driven metal–insulator transition in epitaxial hole-doped Nd1−xSrxNiO3 ultrathin films. Journal of physics. p. . [Online].