A unipolar nano-diode detector with improved performance using the high-k material SiNx. (19th October 2018)

• Record Type: Journal Article
• Authors: Zhang, Linqing; Zhou, Haiping; Zhang, Jiawei; Wang, Qingpu; Zhang, Yifei; Song, Aimin
• Is Part Of: Semiconductor science and technology. Volume 33:Number 11(2018:Nov.)
• Publication Date: 2018-10-19
• Subjects: self-switching diode -- SiNx -- high-k -- nano-rectifier; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/aae2f5
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: The performance of a solid-state planar nano-diode, namely self-switching diode (SSD), is improved by depositing a 100 nm-thick SiN x film with high dielectric constant (high-k) into the insulating nano-trenches. The SiN x film grown by using plasma-enhanced chemical vapour deposition can enhance the electric field coupling over the trenches and thus increase the accumulated charges for field effect. In this case, the current–voltage nonlinearity is improved significantly and the responsivity of high-frequency rectification is also increased by a factor of almost one order up to 100 GHz. In addition, compared to the device without SiN x coating, the low frequency noise of the proposed diode is suppressed dramatically. The improved responsivity and noise-equivalent power of 11 SSDs in parallel with SiN x coating are 110 V W −1 at 50 GHz and 180 pW Hz −1/2, which are comparable to the state-of-the-art data of reported SSD arrays.