Te incorporation in GaAs1−xSbx nanowires and p-i-n axial structure. (28th October 2016)

• Record Type: Journal Article
• Authors: Ahmad, Estiak; Kasanaboina, P K; Karim, M R; Sharma, M; Reynolds, C L; Liu, Y; Iyer, S
• Is Part Of: Semiconductor science and technology. Volume 31:Number 12(2016:Dec.)
• Publication Date: 2016-10-28
• Subjects: Te doping -- pin junction -- GaAsSb nanowire; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/0268-1242/31/12/125001
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: We report on in situ Te-doping in GaAs1−x Sbx nanowires (NWs) grown via self-assisted molecular beam epitaxy. Enhanced Te incorporation in the NW at higher Te cell temperature was attested by the broadening of the x-ray diffraction peak and the presence of a strong coupled-LO phonon mode in the Raman spectra. Te-doping was estimated from the shift in the coupled-LO phonon mode to be ∼2.0 × 10 18 /cm 3 . The surfactant nature of the Te modulated the growth kinetics, which was manifested in an enhanced radial growth rate with improved photoluminescence (PL) characteristics at both room temperature (RT) and 4 K. No noticeable planar defects were observed as ascertained from the high-resolution transmission electron microscopy images and selected-area electron diffraction patterns. Finally, we demonstrate the experimental realization of a GaAs1−x Sbx axial p-type/intrinsic/n-type (p-i-n) structure on a Si substrate with Te as the n-type dopant. The GaAs1−x Sbx p-i-n NW structures exhibited rectifying current–voltage ( I–V ) behavior. The dopant concentration and the transport parameters estimated from the PL spectra and I–V curve were found to be in good agreement.