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APA Citation
Gong, H., Wang, C., Zhang, W., Huai, P., Lu, W., & Zhu, Z. (2016). atomistic simulation of the trapping capability of He-vacancy defects at Ni ∑3(1 1¯ 2)[1 1 0] grain boundary. Modelling and simulation in materials science and engineering, 24, . http://access.bl.uk/ark:/81055/vdc_100087651769.0x00003f