Cite
HARVARD Citation
Gong, H. et al. (2016). Atomistic simulation of the trapping capability of He-vacancy defects at Ni ∑3(1 1¯ 2)[1 1 0] grain boundary. Modelling and simulation in materials science and engineering. p. . [Online].
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Gong, H. et al. (2016). Atomistic simulation of the trapping capability of He-vacancy defects at Ni ∑3(1 1¯ 2)[1 1 0] grain boundary. Modelling and simulation in materials science and engineering. p. . [Online].