Atom probe tomographic assessment of the distribution of germanium atoms implanted in a silicon matrix through nano-apertures. (31st August 2017)

• Record Type: Journal Article
• Authors: Tu, Y; Han, B; Shimizu, Y; Inoue, K; Fukui, Y; Yano, M; Tanii, T; Shinada, T; Nagai, Y
• Is Part Of: Nanotechnology. Volume 28:Number 38(2017)
• Publication Date: 2017-08-31
• Subjects: atom probe tomography -- ion implantation -- nano-aperture -- silicon; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/1361-6528/aa7f49
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: Ion implantation through nanometer-scale apertures (nano-apertures) is a promising method to precisely position ions in silicon matrices, which is a requirement for next generation electronic and quantum computing devices. This paper reports the application of atom probe tomography (APT) to investigate the three-dimensional distribution of germanium atoms in silicon after implantation through nano-aperture of 10 nm in diameter, for evaluation of the amount and spatial distribution of implanted dopants. The experimental results obtained by APT are consistent with a simple simulation with consideration of several effects during lithography and ion implantation, such as channeling and resist flow.