Cite
HARVARD Citation
Oshima, T. et al. (2017). Carrier confinement observed at modulation-doped β-(AlxGa1−x)2O3/Ga2O3 heterojunction interface. Applied physics express. p. . [Online].
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Oshima, T. et al. (2017). Carrier confinement observed at modulation-doped β-(AlxGa1−x)2O3/Ga2O3 heterojunction interface. Applied physics express. p. . [Online].