Optical and electrical properties of two-dimensional anisotropic materials. (June 2019)

• Record Type: Journal Article
• Authors: Zhou, Ziqi; Cui, Yu; Tan, Ping-Heng; Liu, Xuelu; Wei, Zhongming
• Is Part Of: Journal of semiconductors. Volume 40:Number 6(2019:Jun.)
• Publication Date: 2019-06
• Subjects: two-dimensional -- anisotropic -- Raman spectra -- polarization-sensitive -- photodetectors; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1674-4926/40/6/061001
• Languages: English
• ISSNs: 1674-4926

Abstract

Abstract: Two-dimensional (2D) anisotropic materials, such as B-P, B-As, GeSe, GeAs, ReSe2, KP15 and their hybrid systems, exhibit unique crystal structures and extraordinary anisotropy. This review presents a comprehensive comparison of various 2D anisotropic crystals as well as relevant FETs and photodetectors, especially on their particular anisotropy in optical and electrical properties. First, the structure of typical 2D anisotropic crystal as well as the analysis of structural anisotropy is provided. Then, recent researches on anisotropic Raman spectra are reviewed. Particularly, a brief measurement principle of Raman spectra under three typical polarized measurement configurations is introduced. Finally, recent progress on the electrical and photoelectrical properties of FETs and polarization-sensitive photodetectors based on 2D anisotropic materials is summarized for the comparison between different 2D anisotropic materials. Beyond the high response speed, sensitivity and on/off ratio, these 2D anisotropic crystals exhibit highly conduction ratio and dichroic ratio which can be applied in terms of polarization sensors, polarization spectroscopy imaging, optical radar and remote sensing.