Electronic band structures and optical properties of atomically thin AuSe: first-principle calculations. (June 2019)

• Record Type: Journal Article
• Authors: Bai, Pengxiang; Guo, Shiying; Zhang, Shengli; Qu, Hengze; Zhou, Wenhan; Zeng, Haibo
• Is Part Of: Journal of semiconductors. Volume 40:Number 6(2019:Jun.)
• Publication Date: 2019-06
• Subjects: AuSe monolayer -- DFT calculation -- 2D semiconductor; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1674-4926/40/6/062004
• Languages: English
• ISSNs: 1674-4926

Abstract

Abstract: As a large family of 2D materials, transition metal dichalcogenides (TMDs) have stimulated numerous works owing to their attractive properties. The replacement of constituent elements could promote the discovery and fabrication of new nano-film in this family. Using precious metals, such as platinum and palladium, to serve as transition metals combined with chalcogen is a new approach to explore novel TMDs. Also, the proportion between transition metal and chalcogen atoms is found not only to exist in conventional form of 1 : 2. Herein, we reported a comprehensive study of a new 2D precious metal selenide, namely AuSe monolayer. Based on density functional theory, our result indicated that AuSe monolayer is a semiconductor with indirect band-gap of 2.0 eV, which possesses superior dynamic stability and thermodynamic stability with cohesive energy up to –7.87 eV/atom. Moreover, it has been confirmed that ionic bonding predominates in Au–Se bonds and absorption peaks in all directions distribute in the deep ultraviolet region. In addition, both vibration modes dominating marked Raman peaks are parallel to the 2D plane.