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APA Citation
Tang, X., Li, B., Moghadam, H. A., Tanner, P., Han, J., Li, H., Dimitrijev, S., & Wang, J. (2018). mechanism of leakage current increase in p-GaN gate AlGaN/GaN power devices induced by ON-state gate bias. Japanese journal of applied physics, 57, . http://access.bl.uk/ark:/81055/vdc_100087643432.0x000062