Cite
HARVARD Citation
Tang, X. et al. (2018). Mechanism of leakage current increase in p-GaN gate AlGaN/GaN power devices induced by ON-state gate bias. Japanese journal of applied physics. p. . [Online].
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Tang, X. et al. (2018). Mechanism of leakage current increase in p-GaN gate AlGaN/GaN power devices induced by ON-state gate bias. Japanese journal of applied physics. p. . [Online].