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APA Citation
Wang, H., Wang, J., Liu, J., Li, M., He, Y., Wang, M., Yu, M., Wu, W., Zhou, Y., & Dai, G. (2017). normally-off fully recess-gated GaN metal–insulator–semiconductor field-effect transistor using Al2O3/Si3N4 bilayer as gate dielectrics. Applied physics express, 10, . http://access.bl.uk/ark:/81055/vdc_100087640914.0x000012