Cite
HARVARD Citation
Wang, H. et al. (2017). Normally-off fully recess-gated GaN metal–insulator–semiconductor field-effect transistor using Al2O3/Si3N4 bilayer as gate dielectrics. Applied physics express. p. . [Online].
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Wang, H. et al. (2017). Normally-off fully recess-gated GaN metal–insulator–semiconductor field-effect transistor using Al2O3/Si3N4 bilayer as gate dielectrics. Applied physics express. p. . [Online].