Cite
MLA Citation
P H Liao et al.. “Single-fabrication-step Ge nanosphere/SiO2/SiGe heterostructures: a key enabler for realizing Ge MOS devices.” Nanotechnology, vol. 29, 2018, p. . http://access.bl.uk/ark:/81055/vdc_100087638960.0x000036
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P H Liao et al.. “Single-fabrication-step Ge nanosphere/SiO2/SiGe heterostructures: a key enabler for realizing Ge MOS devices.” Nanotechnology, vol. 29, 2018, p. . http://access.bl.uk/ark:/81055/vdc_100087638960.0x000036