Cite
HARVARD Citation
Liao, P. et al. (2018). Single-fabrication-step Ge nanosphere/SiO2/SiGe heterostructures: a key enabler for realizing Ge MOS devices. Nanotechnology. p. . [Online].
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Liao, P. et al. (2018). Single-fabrication-step Ge nanosphere/SiO2/SiGe heterostructures: a key enabler for realizing Ge MOS devices. Nanotechnology. p. . [Online].