Inert Pt electrode switching mechanism after controlled polarity-forming process in In2O3-based resistive random access memory. (31st August 2017)

• Record Type: Journal Article
• Authors: Wu, Cheng-Hsien; Pan, Chih-Hung; Chen, Po-Hsun; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Shih, Chih-Cheng; Chi, Ting-Yang; Chu, Tian-Jian; Wu, Jia-Ji; Du, Xiaoqin; Zheng, Hao-Xuan; Sze, Simon M.
• Is Part Of: Applied physics express. Volume 10:Number 9(2017)
• Publication Date: 2017-08-31
• Subjects: Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/APEX.10.094102
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: In this study, we demonstrate a forming technique that enables us to control whether the switching layer of a Pt/In2 O3 /TiN device is near the Pt electrode or the TiN electrode. This means that In2 O3 -based resistive random access memory (RRAM) can be switched at either the active or inert electrode. The resistive switching current–voltage ( I – V ) curves for both electrodes exhibit stable memory windows. Through material and electrical analyses, we found that the reason for switching at the inert electrode is the oxygen-vacancy-rich characteristic of In2 O3 . Finally, a physical model is proposed to explain this phenomenon.