Inert Pt electrode switching mechanism after controlled polarity-forming process in In2O3-based resistive random access memory. (31st August 2017) - Wu, Cheng-Hsien
Abstract: In this study, we demonstrate a forming technique that enables us to control whether the switching layer of a Pt/In2 O3 /TiN device is near the Pt electrode or the TiN electrode. This means that In2 O3 -based resistive random access memory (RRAM) can be switched at either the active or inert electrode. The resistive switching current–voltage ( I – V ) curves for both electrodes exhibit stable memory windows. Through material and electrical analyses, we found that the reason for switching at the inert electrode is the oxygen-vacancy-rich characteristic of In2 O3 . Finally, a physical model is proposed to explain this phenomenon.