Cite
HARVARD Citation
Yang, W. et al. (2018). Suppressing the excess OFF-state current of short-channel InAs nanowire field-effect transistors by nanoscale partial-gate. Nanotechnology. p. . [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Yang, W. et al. (2018). Suppressing the excess OFF-state current of short-channel InAs nanowire field-effect transistors by nanoscale partial-gate. Nanotechnology. p. . [Online].