Suppressing the excess OFF-state current of short-channel InAs nanowire field-effect transistors by nanoscale partial-gate. (9th August 2018)

• Record Type: Journal Article
• Authors: Yang, Wenyuan; Pan, Dong; Shen, Rui; Wang, Xinzhe; Zhao, Jianhua; Chen, Qing
• Is Part Of: Nanotechnology. Volume 29:Number 41(2018)
• Publication Date: 2018-08-09
• Subjects: InAs nanowires -- FET -- band to band tunneling -- short-channel effect; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/1361-6528/aad67c
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: The excess OFF-state current caused by band to band tunneling (BTBT) is a serious issue particularly in short-channel nanowire (NW) field-effect transistors (FETs), especially for narrow bandgap semiconductors such as InAs. Here, to clarify the components of the OFF-current and suppress the OFF-current, we for the first time fabricate and study InAs NW FETs with nanoscale partial-gate (PG). We fabricate a series of PGFETs and a normal full-gate (FG) FET on the same NW. Based on our results, the BTBT current component can reach tens of nanoamps in a typical 250 nm-channel InAs NW FGFET, and dominate the OFF-current. In contrast, there is almost no BTBT component in the PGFET, which provides a reference for other short-channel InAs NW FETs. Furthermore, the physical mechanism of the OFF-state carrier transport is discussed, and both electrons and holes currents are proven to be very important, based on our experimental results. Also, through statistic study, we find the BTBT effect can be more serious in the devices with better gate-control. Therefore, suppressing the BTBT effect is important to the future scaling-down.