Physical stability against hydrogen plasma for ZnInSnO thin films deposited by combinatorial RF magnetron sputtering. (16th November 2016)

• Record Type: Journal Article
• Authors: Kim, Eun Mi; Oh, Jeung-Pyo; Ha, Tae-Won; Kim, Young-Baek; Kim, Tae-Won; Heo, Gi-Seok
• Is Part Of: Japanese journal of applied physics. Volume 55:Number 12(2016:Dec.)
• Publication Date: 2016-11-16
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/JJAP.55.125801
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: We investigated the physical stability of ZnInSnO thin films against hydrogen plasma using a plasma-enhanced chemical vapor deposition (PECVD) system. The transmittance and resistivity characteristics of the entire ZnInSnO films showed very little degradation after the hydrogen plasma treatment. However, the deposited films with a zinc content of ≤8.8 at. % [Zn/(In + Sn + Zn), at. %] showed some optical and electrical property degradation. Within this compositional range, the resistivity of the films treated with hydrogen plasma increased compared with that of the as-deposited films. For the film with a zinc content of 7.6 at. %, the transmittance decreased by 21% compared with that of the as-deposited ZnInSnO film (at a standard optical wavelength of 2000 nm). The figure of merit of the deposited ZnInSnO thin films with a zinc content of >8.8 at. % was physically stable against hydrogen plasma. We found that the deposited ZnInSnO thin films with a zinc content above 8.8 at. % have high physical stability against hydrogen plasma.