Cite
HARVARD Citation
Sun, Y. et al. (2018). Analytical gate fringe capacitance model for nanoscale MOSFET with layout dependent effect and process variations. Journal of physics. p. . [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Sun, Y. et al. (2018). Analytical gate fringe capacitance model for nanoscale MOSFET with layout dependent effect and process variations. Journal of physics. p. . [Online].