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APA Citation
Jayawardena, A., Shen, X., Mooney, P. M., & Dhar, S. (n.d.). mechanism of phosphorus passivation of near-interface oxide traps in 4H–SiC MOS devices investigated by CCDLTS and DFT calculation. Semiconductor science and technology, 33, . http://access.bl.uk/ark:/81055/vdc_100087560763.0x000055