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HARVARD Citation
Jayawardena, A. et al. (n.d.). Mechanism of phosphorus passivation of near-interface oxide traps in 4H–SiC MOS devices investigated by CCDLTS and DFT calculation. Semiconductor science and technology. p. . [Online].
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Jayawardena, A. et al. (n.d.). Mechanism of phosphorus passivation of near-interface oxide traps in 4H–SiC MOS devices investigated by CCDLTS and DFT calculation. Semiconductor science and technology. p. . [Online].