Near-threshold high spin amplification in a 1300 nm GaInNAs spin laser. (1st August 2018)

• Record Type: Journal Article
• Authors: Cemlyn, Ben; Adams, Mike; Harbord, Edmund; Li, Nianqiang; Henning, Ian; Oulton, Ruth; Korpijärvi, Ville-Markus; Guina, Mircea
• Is Part Of: Semiconductor science and technology. Volume 33:Number 9(2018:Sep.)
• Publication Date: 2018-08-01
• Subjects: spin laser -- spin VCSEL -- spin amplification; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/aad42e
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: Using continuous-wave optical pumping of a spin-VCSEL at room temperature, we find high spin amplification of the pump close to threshold within the communications wavelength window, here at 1300 nm. This facilitates a strong switch from left to right circularly polarised light emission, which has potential applications in polarisation encoding for data communications. We use a simple spin flip model to fit the experimental results and discuss the VCSEL parameters that affect this amplification.