Cite
HARVARD Citation
Takashima, S. et al. (2017). Control of the inversion-channel MOS properties by Mg doping in homoepitaxial p-GaN layers. Applied physics express. p. . [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Takashima, S. et al. (2017). Control of the inversion-channel MOS properties by Mg doping in homoepitaxial p-GaN layers. Applied physics express. p. . [Online].