On determination of charge transfer efficiency of thick, fully depleted CCDs with 55Fe x-rays. (14th July 2017)

• Record Type: Journal Article
• Authors: Yates, D.; Kotov, I.; Nomerotski, A.
• Is Part Of: Journal of instrumentation. Volume 12:Number 7(2017:Jul.)
• Page Start: C07025
• Page End: C07025
• Publication Date: 2017-07-14
• Subjects: Charge transport and multiplication in solid media -- Detector modelling and simulations II (electric fields, charge transport, multiplication and induction, pulse formation, electron emission, etc) -- Photon detectors for UV, visible and IR photons (solid-state) (PIN diodes, APDs, Si-PMTs, G-APDs, CCDs, EBCCDs, EMCCDs etc) -- Image processing; Scientific apparatus and instruments -- Periodicals; 502.84
• DOI: 10.1088/1748-0221/12/07/C07025
• Languages: English
• ISSNs: 1748-0221

Abstract

Abstract: Charge transfer efficiency (CTE) is one of the most important CCD characteristics. This paper examines ways to optimize the algorithms used to analyze 55 Fe x-ray data on the CCDs, as well as explores new types of observables for CTE determination that can be used for testing LSST CCDs. The observables are modeled employing simple Monte Carlo simulations to determine how the charge diffusion in thick, fully depleted silicon affects the measurement. The data is compared to the simulations for one of the observables, integral flux of the x-ray hit.