Cite
HARVARD Citation
Wang, X. et al. (2017). Ferroelectric FET for nonvolatile memory application with two-dimensional MoSe2 channels. 2D materials. p. . [Online].
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Wang, X. et al. (2017). Ferroelectric FET for nonvolatile memory application with two-dimensional MoSe2 channels. 2D materials. p. . [Online].