Ferroelectric FET for nonvolatile memory application with two-dimensional MoSe2 channels. (17th February 2017)

• Record Type: Journal Article
• Authors: Wang, Xudong; Liu, Chunsen; Chen, Yan; Wu, Guangjian; Yan, Xiao; Huang, Hai; Wang, Peng; Tian, Bobo; Hong, Zhenchen; Wang, Yutao; Sun, Shuo; Shen, Hong; Lin, Tie; Hu, Weida; Tang, Minghua; Zhou, Peng; Wang, Jianlu; Sun, Jinglan; Meng, Xiangjian; Chu, Junhao; Li, Zheng
• Is Part Of: 2D materials. Volume 4:Number 2(2017)
• Publication Date: 2017-02-17
• Subjects: 2D materials -- MoSe2 -- ferroelectric memory -- P(VDF-TrFE) -- Fe-FET; Graphene -- Periodicals; Materials science -- Periodicals; Nanostructured materials -- Periodicals; 620.115
• DOI: 10.1088/2053-1583/aa5c17
• Languages: English
• ISSNs: 2053-1583

Abstract

Abstract: Graphene and other two-dimensional materials have received considerable attention regarding their potential applications in nano-electronics. Here, we report top-gate nonvolatile memory field-effect transistors (FETs) with different layers of MoSe2 nanosheets channel gated by ferroelectric film. The conventional gate dielectric of FETs was replaced by a ferroelectric thin film that provides a ferroelectric polarization electric field, and therefore defined as an Fe-FET where the poly (vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) was used as the gate dielectric. Among the devices with MoSe2 channels of different thicknesses, the device with a single layer of MoSe2 exhibited a large hysteresis of electronic transport with an over 10 5 write/erase ratio, and displayed excellent retention and endurance performance. The possible mechanism of the device's good properties was qualitatively analyzed using band theory. Additionally, a comprehensive study comparing the memory properties of MoSe2 channels of different thicknesses is presented. Increasing the numbers of MoSe2 layers was found to cause a reduced memory window. However, MoSe2 thickness of 5 nm yielded a write/erase ratio of more than 10 3 . The results indicate that, based on a Fe-FET structure, the combination of two-dimensional semiconductors and organic ferroelectric gate dielectrics shows good promise for future applications in nonvolatile ferroelectric memory.