Effects of gamma irradiation on the electrical characteristics of trench-gate non-punch-through insulated gate bipolar transistor. (22nd May 2019)

• Record Type: Journal Article
• Authors: Baek, Hani; Yoon, Tae-Sik; Sun, Gwang Min; Shin, Chansun
• Is Part Of: Semiconductor science and technology. Volume 34:Number 6(2019)
• Publication Date: 2019-05-22
• Subjects: insulated gate bipolar transistor -- gamma irradiation -- total dose effects -- trench gate IGBT; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/ab157d
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: We studied the effects of gamma-ray irradiation on the static and dynamic electrical characteristics of a trench-gate non-punch-through insulated gate bipolar transistor (IGBT) device. The threshold voltage and breakdown voltage decreased after irradiation, whereas the collector leakage current increased. Turn-on and turn-off switching times decreased and increased, respectively, with the irradiation dose. The irradiation-induced changes in the electrical characteristics can be attributed to the buildup of the positive oxide-trapped charges in the gate oxide by gamma irradiation. The evaluated characteristics data were compared with the data for gamma-irradiated planar-gate IGBTs reported in the literature. It was found that a significant degradation occurred in the shift of the threshold voltage and switching times for trench-gate IGBTs.