Charge carrier transport properties of Mg-doped Al0.6Ga0.4N grown by molecular beam epitaxy. (11th July 2018)

• Record Type: Journal Article
• Authors: Liu, Xianhe; Pandey, Ayush; Laleyan, David A; Mashooq, Kishwar; Reid, Eric T; Shin, Walter Jin; Mi, Zetian
• Is Part Of: Semiconductor science and technology. Volume 33:Number 8(2018:Aug.)
• Publication Date: 2018-07-11
• Subjects: AlGaN -- wide bandgap -- p-type doping -- deep UV; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/aace97
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: We have studied the charge carrier transport properties of Mg-doped AlGaN epilayers with Al composition ∼60% grown by plasma-assisted molecular beam epitaxy. At room temperature, free hole concentration up to 8.7 × 10 17 cm −3 was measured, and hole mobility values in the range of 10–17 cm 2 V −1 s −1 can be reliably achieved. Significantly, a minimum resistivity of 0.7 Ω cm was measured, and its dependence on the Mg dopant incorporation was identified. Detailed temperature-dependent charge carrier transport studies further revealed that the hole concentration exhibited a negligible dependence on temperature near room temperature, but increases drastically for temperatures above 300 °C, suggesting the importance of impurity band conduction at room temperature.