Contactless non-destructive imaging of doping density and electrical resistivity of semiconductor Si wafers using lock-in carrierography. (24th October 2018)

• Record Type: Journal Article
• Authors: Song, Peng; Melnikov, Alexander; Sun, Qiming; Mandelis, Andreas; Liu, Junyan
• Is Part Of: Semiconductor science and technology. Volume 33:Number 12(2018:Dec.)
• Publication Date: 2018-10-24
• Subjects: lock-in carrierography -- effective lifetime -- dopant concentration -- resistivity; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/aae810
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: A contactless non-destructive imaging method for spatially resolved dopant concentration, [2.2] N d, and electrical resistivity, ρ, of n - and p -type silicon wafers using lock-in carrierography images at various laser irradiation intensities is presented. Amplitude and phase information from wafer sites with known resistivity was employed to derive a calibration factor for accurate determination of the absolute carrier generation rate. A frequency-domain model based on the nonlinear nature of photocarrier radiometric signals was used to extract dopant density images. Lateral variations in the resistivity of an n -type and a p -type wafer obtained by means of this methodology were found to be in excellent agreement with those obtained with conventional 4-point probe measurements. This all-optical contactless method can be used as a non-destructive tool for doping density and electrical resistivity measurements and their images over large semiconductor areas. N d, ρ and their variances can be measured and mapped for the photovoltaic, micro- and opto-electronic industries including on wafers with oxides or surface treated layers for which contacting electrical measurements are impossible.