Comprehensive growth and characterization study on highly n-doped InGaAs as a contact layer for quantum cascade laser applications. (16th April 2018)

• Record Type: Journal Article
• Authors: Demir, Ilkay; Altuntas, Ismail; Bulut, Baris; Ezzedini, Maher; Ergun, Yuksel; Elagoz, Sezai
• Is Part Of: Semiconductor science and technology. Volume 33:Number 5(2018:May)
• Publication Date: 2018-04-16
• Subjects: InGaAs -- MOVPE -- V/III ratio -- carrier concentration; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/aab9d3
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: We present growth and characterization studies of highly n-doped InGaAs epilayers on InP substrate by metal organic vapor phase epitaxy to use as an n-contact layer in quantum cascade laser applications. We have introduced quasi two-dimensional electrons between 10 s pulsed growth n-doped InGaAs epilayers to improve both carrier concentration and mobility of structure by applying pulsed growth and doping methods towards increasing the Si dopant concentration in InGaAs. Additionally, the V/III ratio optimization under fixed group III source flow has been investigated with this new method to understand the effects on both crystalline quality and electrical properties of n-InGaAs epilayers. Finally, we have obtained high crystalline quality of n-InGaAs epilayers grown by 10 s pulsed as a contact layer with 2.8 × 10 19 cm −3 carrier concentration and 1530 cm 2 V −1 s −1 mobility.