Parametric study on the well-oriented growth of InxAl1-xN nanodots by magnetron sputtering. (1st November 2019)
- Record Type:
- Journal Article
- Title:
- Parametric study on the well-oriented growth of InxAl1-xN nanodots by magnetron sputtering. (1st November 2019)
- Main Title:
- Parametric study on the well-oriented growth of InxAl1-xN nanodots by magnetron sputtering
- Authors:
- Zhao, Yang
Wang, Hui
Li, Xinzhong
Li, Jingjie
Shi, Zhifeng
Wu, Guoguang
Zhuang, Shiwei
Yin, Chuanlei
Yang, Fan - Abstract:
- Abstract: Inx Al1-x N alloys are expected to have immense potential in optoelectronic device applications. However, the synthesis of high quality Inx Al1-x N alloys still remain a difficulty. Herein, we report the growth of Inx Al1-x N alloys on Al2 O3 substrate by radio-frequency magnetron sputtering. The deposition conditions such as nitrogen concentration, substrate temperature and growth time affect the structural and morphological properties of Inx Al1-x N alloys, which were investigated using X-ray diffraction, scanning electron microscope and X-ray photoelectron spectroscopy. The results showed that the Inx Al1-x N alloys grown at lower nitrogen concentration (20%) and higher substrate temperature (500 °C) exhibited phase separation. It was found that the surface morphology of Inx Al1-x N alloys presented a transition from uniform nanodots to disordered nanoclusters with the substrate temperature increased from room temperature to 500 °C. Finally, well-oriented In0 · 62 Al0 · 38 N nanodots were achieved at a nitrogen concentration of 40%, a substrate temperature of 300 °C, and a growth time of 120 min. It was believed that this research will lay a good foundation for the preparation of high-quality InAlN alloys that can be employed in reliable optoelectronic devices.
- Is Part Of:
- Materials science in semiconductor processing. Volume 102(2019)
- Journal:
- Materials science in semiconductor processing
- Issue:
- Volume 102(2019)
- Issue Display:
- Volume 102, Issue 2019 (2019)
- Year:
- 2019
- Volume:
- 102
- Issue:
- 2019
- Issue Sort Value:
- 2019-0102-2019-0000
- Page Start:
- Page End:
- Publication Date:
- 2019-11-01
- Subjects:
- InxAl1-xN -- Magnetron sputtering -- Nanodots -- Structural properties -- Crystal growth
Semiconductors -- Periodicals
Integrated circuits -- Materials -- Periodicals
Semiconducteurs -- Périodiques
Circuits intégrés -- Matériaux -- Périodiques
Electronic journals
621.38152 - Journal URLs:
- http://www.sciencedirect.com/science/journal/latest/13698001 ↗
http://www.elsevier.com/journals ↗ - DOI:
- 10.1016/j.mssp.2019.104583 ↗
- Languages:
- English
- ISSNs:
- 1369-8001
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 5396.440600
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 11048.xml