Controllable fabrication and field emission properties of cactus-like Cu2-xSe@Cu2-xSe nanowalls via the vertical secondary growth. (September 2019)

• Record Type: Journal Article
• Authors: Hou, Xin; Xie, Pei; Li, Lingwei; Xue, Shaolin; Feng, Hange; Liu, Zhiyuan; Gong, Jibin; Wei, Xiaofan; Gong, Yinchu; Zou, Rujia
• Is Part Of: Materials science in semiconductor processing. Volume 100(2019)
• Page Start: 310
• Page End: 318
• Publication Date: 2019-09
• Subjects: Cu2-xSe nanowalls -- Hydrothermal process -- Secondary growth -- Field emission; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2019.04.044
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: The cactus-like Cu2-x Se@Cu2-x Se nanowalls was prepared by secondary growth method using Cu2-x Se nanowalls as substrate. This special nanostructure comprises Cu2-x Se nano spines neatly growing on the sharp edges of Cu2-x Se nanowalls. Reaction time has a powerful effect on the formation and morphologies of Cu2-x Se nanowalls. XRD analysis indicated the cubic berzelianite phase of Cu2-x Se. The cactus-like Cu2-x Se@Cu2-x Se nanowalls presents a better field electron emission performance than the first synthesized Cu2-x Se nanowalls, possessing the turn-on field 2.04 V/μm and the enhancement factor of 5181. The formation mechanism of cactus-like Cu2-x Se@Cu2-x Se nanowalls was discussed and proposed. The results indicated that the cactus-like Cu2-x Se@Cu2-x Se nanowalls can be used as a promising material in field emission applications.