High-performance texturization of multicrystalline silicon wafer by HF/HNO3/H2O system incorporated with MnO2 particles. (October 2019)

• Record Type: Journal Article
• Authors: Liu, Huan; Zhao, Lei; Diao, Hongwei; Wang, Wenjing
• Is Part Of: Materials science in semiconductor processing. Volume 101(2019)
• Page Start: 149
• Page End: 155
• Publication Date: 2019-10
• Subjects: Multi-crystalline silicon -- Texturization -- Wet acid etching -- Manganese dioxide -- Reflectance -- Solar cell; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2019.06.003
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: Manganese dioxide (MnO2 ) particles were incorporated into the traditional wet acid etching (HF/HNO3 /H2 O) system to improve the texturization performance of multicrystalline silicon (mc-Si) wafers. Low surface reflectance ( R ) was obtained on both the slurry wire sawn (SWS) mc-Si and the diamond wire sawn (DWS) mc-Si. By studying the effects of the MnO2 usage amount and the reaction time on the average thickness reduction, the texture morphology and R of the textured mc-Si wafer, the etching mechanism was revealed. Via optimizing the etching condition preliminarily, a low weighted average surface reflectance ( R a ) for the AM1.5G sun spectrum in the wavelength range of 380–1100 nm was achieved as about 23% on SWS mc-Si and about 25% on DWS mc-Si.