Combined experimental and numerical approach to study electro-mechanical resonant phenomena in GaN-on-Si heterostructures. (September 2018)

• Record Type: Journal Article
• Authors: Pribahsnik, F.P.; Bernardoni, M.; Nelhiebel, M.; Mataln, M.; Lindemann, A.
• Is Part Of: Microelectronics and reliability. Volume 88/90(2018)
• Page Start: 389
• Page End: 392
• Publication Date: 2018-09
• Subjects: GaN -- Piezoelectric -- Vibration -- Resonance; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2018.07.042
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: Due to the intrinsic piezoelectric nature of Gallium Nitride (GaN), devices manufactured with such technology are in principle prone to experience electro-mechanically induced resonance phenomena under operating conditions. In this paper, we present the thorough approach combining simulation and experiment to study the occurrence and implications of such electro-mechanical resonances. A simple GaN-on-Si capacitor test structure was fabricated and electrically excited in order to activate the mechanical eigenmodes of the assembly which are measured by a Laser-Doppler-Scanning-Vibrometer. A multiphysics Finite Element (FE) model of the tested structures was built in order to perform harmonic analysis and to quantitatively study the effects of damping on displacement, stress and strain. A mathematical comparison on different aspects between the model and measurements show good agreement. This successfully verifies the methodology to model the dynamic resonance behaviour of piezoelectric active chips.