Cite
HARVARD Citation
Magnone, P. et al. (2018). Investigation of degradation mechanisms in low-voltage p-channel power MOSFETs under High Temperature Gate Bias stress. Microelectronics and reliability. pp. 438-442. [Online].
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Magnone, P. et al. (2018). Investigation of degradation mechanisms in low-voltage p-channel power MOSFETs under High Temperature Gate Bias stress. Microelectronics and reliability. pp. 438-442. [Online].