Thermal modeling of wire-bonded power modules considering non-uniform temperature and electric current interactions. (September 2018)

• Record Type: Journal Article
• Authors: Akbari, M.; Bahman, A.S.; Reigosa, P.D.; Iannuzzo, F.; Bina, M.T.
• Is Part Of: Microelectronics and reliability. Volume 88/90(2018)
• Page Start: 1135
• Page End: 1140
• Publication Date: 2018-09
• Subjects: Active area -- Bond wire -- Electrical conductivity -- Electric current -- Finite element method -- Non-uniform temperature distribution -- Si IGBT -- SiC MOSFET; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2018.07.150
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: To assess power devices' reliability, it is crucial to have a relatively accurate thermal approach which provides valid temperature estimates. In this paper, a commercial Si IGBT and SiC MOSFET power modules are investigated. Also, the electric current-induced effects on bond wires and the correlation between the non-uniform temperature distribution and electrical conductivity of the sensitive constituent materials are studied. A more realistic active area of the die is defined by excluding inactive regions, i.e., the gate area, gate runners, and termination ring. Also, the electric current distribution among parallel bond wires attached to the dies' metalization pads is investigated. A comparison between an approach which includes all the above aspects with a conventional one where a thermal power with the same total value, but unifrom, is injected into the semiconductor dies is made, While an acceptable error is found for Si IGBTs, a very significant difference is observed in SiC MOSFETs. Highlights: Power modules under study consists of a conventional structure together with bond wires and defined active areas. Temperature distribution of dies is analyzed through FEM. Interactions of non-uniform temperature distribution of dies and electric current is modeled by a temperature-dependent electrical conductivity. For Si IGBTs, an acceptable temperature error is shown between a relatively complete structure and a conventional one. In SiC MOSFETs, there is a very significant temperature difference between a relatively complete structure and a conventional one.