Evolution of C-V and I-V characteristics for a commercial 600 V GaN GIT power device under repetitive short-circuit tests. (September 2018)

• Record Type: Journal Article
• Authors: Fu, J.Z.; Fouquet, F.; Kadi, M.; Dherbécourt, P.
• Is Part Of: Microelectronics and reliability. Volume 88/90(2018)
• Page Start: 652
• Page End: 655
• Publication Date: 2018-09
• Subjects: GaN -- Short-circuit -- Aging test -- I-V and C-V characteristics; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2018.06.034
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: In this article, a repetitive and non-destructive short-circuit aging test is developed to characterize the electrical parameters evolutions of a 600 V GaN Gate Injection Transistor (GIT). The evolutions of C-V and I-V characteristics during the repetitive short-circuit tests with a relatively low bias voltage and long pulse duration are presented and summarized. The capacitance CGD at on-state mode and the gate current at relative high gate voltage show significant degradations before and after test.